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HN4B101J Datasheet - Toshiba

HN4B101J Silicon NPN/PNP Epitaxial Type Transistor

HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B101J MOS Gate Drive Applications Switching Applications Small footprint due to a small and thin package High DC current gain : hFE = 200 to 500 (IC = 0.12 A) Low collector-emitter saturation: PNP VCE (sat) = 0.20 V (max) : NPN VCE (sat) = 0.17 V (max) High-speed switching : PNP tf = 45 ns (typ.) : NPN tf = 50 ns (typ.) 2.9±0.2 1.9±0.2 0.95 0.95 　　+0.2 2.8 -0.

HN4B101J Datasheet (250.38 KB)

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Datasheet Details

Part number:

HN4B101J

Manufacturer:

Toshiba ↗

File Size:

250.38 KB

Description:

Silicon npn/pnp epitaxial type transistor.

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HN4B101J Silicon NPN PNP Epitaxial Type Transistor Toshiba

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