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K4112 - Field Effect Transistor

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Datasheet Details

Part number K4112
Manufacturer Toshiba
File Size 206.95 KB
Description Field Effect Transistor
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Full PDF Text Transcription

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2SK4112 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4112 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 (typ.) • High forward transfer admittance: |Yfs| = 5.5S (typ.) • Low leakage current: IDSS = 100 A (VDS = 600 V) • Enhancement mode: Vth = 2.0~4.
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