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RN1706JE Toshiba (https://www.toshiba.com/) Silicon NPN Epitaxial Type Transistors

Toshiba
Description RN1701JE~RN1706JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1701JE, RN1702JE, RN1703JE RN1704JE, RN1705JE, RN1706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. • Incorporating a bias resistor into a transistor reduces part...
Features (Q1, Q2 common) Characteristics Collector-base voltage Collector-emitter voltage RN1701JE to 1706JE Emitter-base voltage RN1701JE to 1704JE RN1705JE RN1706JE Collector current Collector power dissipation RN1701JE Junction temperature to 1706JE Storage temperature range Symbol Rating Unit VCBO VCEO 50 V 50 V VEBO 10 V 5 IC 100...

Datasheet PDF File RN1706JE Datasheet 544.63KB

RN1706JE   RN1706JE   RN1706JE  




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