SSM3J352F mosfet equivalent, silicon p-channel mosfet.
(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 443 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 199 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 136 mΩ (max) (@.
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2. Features
(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) =.
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