SSM3J355R mosfet equivalent, silicon p-channel mosfet.
(1) 1.8 V drive (2) Low drain-source on-resistance
: RDS(ON) = 36.0 mΩ (typ.) (VGS = -1.8 V) RDS(ON) = 28.0 mΩ (typ.) (VGS = -2.5 V) RDS(ON) = 23.0 mΩ (typ.) (VGS = -4.5 .
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2. Features
(1) 1.8 V drive (2) Low drain-source on-resistance
: RDS(ON) = 36.0 mΩ (typ..
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