SSM3J358R mosfet equivalent, silicon p-channel mosfet.
(1) 1.8 V drive (2) Low drain-source on-resistance
: RDS(ON) = 49.3 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 32.8 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 27.7 mΩ (max) (@VGS = -3.6 .
* Power Management Switches
2. Features
(1) 1.8 V drive (2) Low drain-source on-resistance
: RDS(ON) = 49.3 mΩ (max).
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