SSM3J358R Datasheet Silicon P-Channel MOSFET

Manufacturer: Toshiba

Datasheet Details

MOSFETs Silicon P-Channel MOS SSM3J358R 1.

Applications • Power Management Switches 2.

(1) 1.8 V drive (2) Low drain-source on-resistance : RDS(ON) = 49.3 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 32.8 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 27.7 mΩ (max) (@VGS = -3.6 V) RDS(ON) = 25.3 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 22.1 mΩ (max) (@VGS = -8 V) 3. Packaging and Pin Assignment SOT-23F SSM3J358R 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-11 2017-01-24 Rev.2.0 SSM3J358R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 2.