SSM3K15ACTC - Silicon N-Channel MOSFET

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Toshiba

Part number	SSM3K15ACTC
Manufacturer	Toshiba
File Size	227.50 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM3K15ACTC Datasheet
Additional preview pages of the SSM3K15ACTC datasheet.

(1) 2.5 V drive (2) Low drain-source on-resistance : RDS(ON) = 3.6 Ω (max) (@VGS = 4 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) 3. Packaging and Pin Assignment SSM3K15ACTC CST3C ©2016-2017 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-05 2017-11-30 Rev.2.0 SSM3K15ACTC 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 V D.

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Published: Dec 14, 2023 |