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SSM3K15CT
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
SSM3K15CT
High-Speed Switching Applications Analog Switch Applications
Unit: mm
Optimum for high-density mounting in small packages Low ON-resistance
: Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
30
V
Gate-source voltage
VGSS
20
V
Drain current
DC
ID
Pulse
IDP
100 mA
200
Drain power dissipation (Ta 25C) PD (Note 1)
100
mW
Channel temperature
Tch
150
C
CST3
Storage temperature
Tstg
55 to 150
C
Note: Using continuously under heavy loads (e.g. the application of high
CST3
temperature/current/voltage and the significant change in temperature,
JEDEC
-
etc.
SSM3K15CT Datasheet
