SSM3K15CT - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	SSM3K15CT
Manufacturer	Toshiba Semiconductor
File Size	419.25 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM3K15CT Datasheet
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SSM3K15CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K15CT High-Speed Switching Applications Analog Switch Applications Unit: mm  Optimum for high-density mounting in small packages  Low ON-resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta  25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 30 V Gate-source voltage VGSS 20 V Drain current DC ID Pulse IDP 100 mA 200 Drain power dissipation (Ta  25C) PD (Note 1) 100 mW Channel temperature Tch 150 C CST3 Storage temperature Tstg 55 to 150 C Note: Using continuously under heavy loads (e.g. the application of high CST3 temperature/current/voltage and the significant change in temperature, JEDEC - etc.

Published: Sep 11, 2008 |