SSM3K15CT Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type High-Speed Switching Applications Analog Switch Applications Unit: mm - Optimum for high-density mounting in small packages - Low ON-resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta  25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VGSS 20 Drain current Pulse 100 m A Drain power dissipation (Ta  25C) PD (Note 1) 100 m W Channel temperature Tch C CST3 Storage temperature Tstg - 55 to 150 C Note: Using continuously under heavy loads (e.g. the application of high CST3 temperature/current/voltage and the significant change in temperature, JEDEC - etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum JEITA...