Datasheet Summary
MOSFETs Silicon N-Channel MOS
1. Applications
- High-Speed Switching
- Analog Switches
2. Features
(1) 1.5 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 5.6 Ω (max) (@VGS = 1.5 V) RDS(ON) = 4.0 Ω (max) (@VGS = 1.8 V) RDS(ON) = 3.0 Ω (max) (@VGS = 2.5 V) RDS(ON) = 2.2 Ω (max) (@VGS = 4.5 V)
3. Packaging and Pin Assignment
CST3C
©2016-2017 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2015-12
2017-11-30 Rev.2.0
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