SSM3K16CT
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
High-Speed Switching Applications Analog Switch Applications
Unit: mm
- Suitable for high-density mounting due to pact package
- Low ON-resistance : Ron = 3.0 Ω (max) (@VGS = 4 V)
: Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
VGSS
±10
Drain current
DC Pulse
100 m A
Drain power dissipation (Ta = 25°C)
PD (Note 1)
100 m W
Channel temperature
Tch
°C
Storage temperature
Tstg
- 55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
JEDEC
CST3
- temperature, etc.) may cause this product to decrease in the
JEITA
- reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are...
