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SSM3K16CT - Silicon N-Channel MOSFET

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Part number SSM3K16CT
Manufacturer Toshiba Semiconductor
File Size 182.82 KB
Description Silicon N-Channel MOSFET
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SSM3K16CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K16CT High-Speed Switching Applications Analog Switch Applications Unit: mm • Suitable for high-density mounting due to compact package • Low ON-resistance : Ron = 3.0 Ω (max) (@VGS = 4 V) : Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ±10 V Drain current DC Pulse ID 100 mA IDP 200 Drain power dissipation (Ta = 25°C) PD (Note 1) 100 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g.
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