Silicon N Channel MOS Type High Speed Switching Applications
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SSM3K16FV
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K16FV
High Speed Switching Applications Analog Switch Applications
• Suitable for high-density mounting due to compact package • Low on-resistance : Ron = 3.0 Ω (max) (@VGS = 4 V)
: Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
20
V
Gate-Source voltage Drain current
DC Pulse
VGSS ID IDP
±10
V
100 mA
200
Drain power dissipation (Ta = 25°C) PD (Note 1)
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to 150
°C
0.22±0.05
1.2±0.05 0.8±0.05
nit: mm
0.32±0.05
1 3
2
1.2±0.05 0.8±0.05 0.4 0.4
0.13±0.05
0.5±0.05
VESM
1.Gate 2.Source 3.
SSM3K16FV Datasheet
