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SSM3K16FV - Silicon N-Channel MOSFET

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Part number SSM3K16FV
Manufacturer Toshiba Semiconductor
File Size 154.46 KB
Description Silicon N-Channel MOSFET
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SSM3K16FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FV High Speed Switching Applications Analog Switch Applications • Suitable for high-density mounting due to compact package • Low on-resistance : Ron = 3.0 Ω (max) (@VGS = 4 V) : Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage Drain current DC Pulse VGSS ID IDP ±10 V 100 mA 200 Drain power dissipation (Ta = 25°C) PD (Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C 0.22±0.05 1.2±0.05 0.8±0.05 nit: mm 0.32±0.05 1 3 2 1.2±0.05 0.8±0.05 0.4 0.4 0.13±0.05 0.5±0.05 VESM 1.Gate 2.Source 3.
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