Silicon N Channel MOS Type High Speed Switching Applications
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SSM3K16TE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K16TE
High Speed Switching Applications Analog Switch Applications
· · Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V) : Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD Tch Tstg Rating 20 ±10 100 200 100 150 -55~150 Unit V V mA mW °C °C
Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
― ― 2-1B1B
Marking
3
Equivalent Circuit
3
Weight: 2.2 mg (typ.
SSM3K16TE Datasheet
