SSM3K15TE Datasheet | Toshiba

.. TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications 1.2±0.05 0.32±0.05 ３ 0.14±0.05 0.8±0.05 Unit: mm - - Small package 0.45 0.45 1.4±0.05 0.9±0.1 Low on resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) １ ２ Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD Tch Tstg Rating 30 ±20 100 200 100 150 - 55~150 Unit V V m A m W °C °C 0.59±0.05 Absolute Maximum Ratings (Ta = 25°C) TESM JEDEC JEITA 1. Gate 2. Source 3. Drain Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature - Note: TOSHIBA 2-1B1B Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.0022 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Equivalent Circuit Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that e into direct contact with devices should be made of anti-static materials. 2007-11-01 .. Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance...