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SSM3K15TE - High Speed Switching Applications

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Part number SSM3K15TE
Manufacturer Toshiba Semiconductor
File Size 203.13 KB
Description High Speed Switching Applications
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www.DataSheet4U.com SSM3K15TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15TE High Speed Switching Applications Analog Switch Applications 1.2±0.05 0.32±0.05 ３ 0.14±0.05 0.8±0.05 Unit: mm • • Small package 0.45 0.45 1.4±0.05 0.9±0.1 Low on resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) １ ２ Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD Tch Tstg Rating 30 ±20 100 200 100 150 −55~150 Unit V V mA mW °C °C 0.59±0.05 Absolute Maximum Ratings (Ta = 25°C) TESM JEDEC JEITA 1. Gate 2. Source 3. Drain Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature - Note: TOSHIBA 2-1B1B Using continuously under heavy loads (e.g.
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