Datasheet Summary
MOSFETs Silicon P-Channel MOS (U-MOS)
1. Applications
- Power Management Switches
2. Features
(1) AEC-Q101 qualified (Note 1) (2) 1.5-V gate drive voltage. (3) Low drain-source on-resistance
: RDS(ON) = 54 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 36 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 26 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 22.5 mΩ (max) (@VGS = -4.5 V)
Note 1: For detail information, please contact to our sales.
3. Packaging and Pin Configuration
UF6
1, 2, 5, 6: Drain 3: Gate 4: Source
©2017-2018 Toshiba Electronic Devices & Storage Corporation
2018-03-27 Rev.1.0
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