SSM6J424TU Datasheet Silicon P-channel MOSFET

Manufacturer: Toshiba

Overview: MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J424TU 1. Applications • Power Management Switches 2.

Datasheet Details

(1) AEC-Q101 qualified (Note 1) (2) 1.5-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 54 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 36 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 26 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 22.5 mΩ (max) (@VGS = -4.5 V) Note 1: For detail information, please contact to our sales. 3. Packaging and Pin Configuration UF6 SSM6J424TU 1, 2, 5, 6: Drain 3: Gate 4: Source ©2017-2018 Toshiba Electronic Devices & Storage Corporation 1 2018-03-27 Rev.1.0 SSM6J424TU 4.