Datasheet Summary
MOSFETs Silicon N-Channel MOS
1. Applications
- High-Speed Switching
2. Features
(1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V, ID = 800 mA) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V, ID = 600 mA) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V, ID = 200 mA) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V, ID = 50 mA)
3. Packaging and Pin Assignment
ES6
1. Source1 2. Gate1 3. Drain2 4. Source2 5. Gate2 6. Drain1
Start of mercial production
2014-03
2014-04-10
Rev.1.0
4....