Datasheet Summary
MOSFETs Silicon N-Channel MOS
1. Applications
- High-Speed Switching
2. Features
(1) Gate-Source diode for protection (2) Low drain-source on-resistance
: RDS(ON) = 2.8 Ω (typ.) (@VGS = 10 V, ID = 100 mA) RDS(ON) = 3.1 Ω (typ.) (@VGS = 5 V, ID = 100 mA) RDS(ON) = 3.2 Ω (typ.) (@VGS = 4.5 V, ID = 100 mA)
3. Packaging and Pin Assignment
US6
1. Source1 2. Gate1 3. Drain2 4. Source2 5. Gate2 6. Drain1
Start of mercial production
2015-04
2015-04-13
Rev.1.0
4....
