SSM6N7002CFU mosfet equivalent, silicon n-channel mosfet.
(1) Gate-Source diode for protection (2) Low drain-source on-resistance
: RDS(ON) = 2.8 Ω (typ.) (@VGS = 10 V, ID = 100 mA) RDS(ON) = 3.1 Ω (typ.) (@VGS = 5 V, ID = 100 m.
* High-Speed Switching
2. Features
(1) Gate-Source diode for protection (2) Low drain-source on-resistance
: RDS(ON).
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