SSM6N815R mosfet equivalent, silicon n-channel mosfet.
(1) 4.0 V drive (2) Low drain-source on-resistance
: RDS(ON) = 115 mΩ (typ.) (@VGS = 4.0 V) RDS(ON) = 101 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 84 mΩ (typ.) (@VGS = 10 V)
3..
* Power Management Switches
2. Features
(1) 4.0 V drive (2) Low drain-source on-resistance
: RDS(ON) = 115 mΩ (typ.).
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