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SSM6N813R - Silicon N-Channel MOSFET

Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175.
  • MOSFET (3) 4.5 V drive (4) Low drain-source on-resistance : RDS(ON) = 110 mΩ (typ. ) (@VGS = 4.5 V) RDS(ON) = 88 mΩ (typ. ) (@VGS = 10 V) 3. Packaging and Pin Assignment SSM6N813R 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 TSOP6F 4. Orderable part number Orderable part number AEC-Q101 Note SSM6N813R,LF SSM6N813R,LXGF SSM6N813R,LXHF.
  • YES YES (Note 1) General Use Unintended Use Aut.

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Datasheet Details

Part number SSM6N813R
Manufacturer Toshiba
File Size 427.65 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SSM6N813R Datasheet

Full PDF Text Transcription

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MOSFETs Silicon N-Channel MOS SSM6N813R 1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 � MOSFET (3) 4.5 V drive (4) Low drain-source on-resistance : RDS(ON) = 110 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 88 mΩ (typ.) (@VGS = 10 V) 3. Packaging and Pin Assignment SSM6N813R 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 TSOP6F 4. Orderable part number Orderable part number AEC-Q101 Note SSM6N813R,LF SSM6N813R,LXGF SSM6N813R,LXHF � YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website.
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