SSM6N813R
SSM6N813R is Silicon N-Channel MOSFET manufactured by Toshiba.
Features
(1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175
- MOSFET (3) 4.5 V drive (4) Low drain-source on-resistance
: RDS(ON) = 110 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 88 mΩ (typ.) (@VGS = 10 V)
3. Packaging and Pin Assignment
1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1
TSOP6F
4. Orderable part number
Orderable part number
AEC-Q101
Note
SSM6N813R,LF SSM6N813R,LXGF SSM6N813R,LXHF
- YES YES
(Note 1)
General Use Unintended Use Automotive Use
Note 1: For more information, please contact our sales or use the inquiry form on our website.
(Note 1)
©2018-2021
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2018-04
2021-06-03 Rev.5.0
5. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
- ) (Q1,Q2 mon)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
VDSS
VGSS
±20
Drain current (DC) Drain current (pulsed)
(Note 1)
(Note 1), (Note 2)
Power dissipation Power...
