SSM6N815R
SSM6N815R is Silicon N-Channel MOSFET manufactured by Toshiba.
Features
(1) 4.0 V drive (2) Low drain-source on-resistance
: RDS(ON) = 115 mΩ (typ.) (@VGS = 4.0 V) RDS(ON) = 101 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 84 mΩ (typ.) (@VGS = 10 V)
3. Packaging and Pin Assignment
TSOP6F
1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1
©2017 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2017-09
2017-08-29 Rev.1.0
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) (Q1,Q2 mon)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 100 V
Gate-source voltage
VGSS
±20
Drain current (DC) Drain current (pulsed)
(Note 1) (Note 1), (Note 2)
ID IDP
2A 4
Power dissipation
(Note 3)
1.4 W
Power dissipation
(t ≤ 10 s)
(Note 3)
Single-pulse avalanche energy
(Note 4)
10.1 m J
Avalanche current
IAR 2 A
Channel temperature...
