TBC549 - Silicon NPN Transistor

Toshiba

Key Features

. Low Noise : 4dB Max. (TBC549) 3dB Max. (TBC550) . High V CE o : 30V (TBC549) 45V (TBC550) . High hpE : 200 ~800 5MAX. jiil TBC549 TBC550 Unit in mm.

TBC549 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	TBC549
Manufacturer	Toshiba
File Size	52.35 KB
Description	Silicon NPN Transistor
Datasheet	TBC549 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
TBC50C04	Hall Current Sensor	Token Electronics
TBC50DS	Hall Current Sensor	Token Electronics
TBC-DS	Hall Current Sensor	Token Electronics
TBC06DS	Hall Current Sensor	Token Electronics
TBC0747	DUAL OPERATIONAL AMPLIFIER	Siemens

Other Datasheets by Toshiba

Part Number	Description
TBC546	Silicon NPN Transistor
TBC547	Silicon NPN Transistor
TBC548	Silicon NPN Transistor
TBC550	Silicon NPN Transistor
TBC556	Silicon PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR LOW NOISE STAGE OF AUDIO AMPLIFIERS. FEATURES . Low Noise : 4dB Max. (TBC549) 3dB Max. (TBC550) . High V CE o : 30V (TBC549) 45V (TBC550) . High hpE : 200 ~800 5MAX. jiil TBC549 TBC550 Unit in mm MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC549 V(BR)CBO TBC550 Collector-Emitter Breakdown Voltage TBC549 v (BR)CEO TBC550 Emitter-Base Breakdown Voltage v (BR)EBO Collector Current DC Peak Base Current (Peak) Collector Power Dissipation Junction Temperature Storage Temperature Range ic ICP IBP Ti L stg RATING 30 50 30 45 UNIT 100 mA 200 200 mA 500 mW 150 -65-150 1. COLLECTOR 2. BASE 3. EMITTER Weight : 0.