| Description | : SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR LOW NOISE STAGE OF AUDIO AMPLIFIERS. FEATURES . Low Noise : 4dB Max. (TBC549) 3dB Max. (TBC550) . High V CE o : 30V (TBC549) 45V (TBC550) . High hpE : 200 ~800 5MAX. jiil TBC549 TBC550 Unit in mm MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC549 V(BR)CBO TBC550 Collector-Emitter Breakd... |
| Features |
. Low Noise : 4dB Max. (TBC549)
3dB Max. (TBC550) . High V CE o : 30V (TBC549)
45V (TBC550)
. High hpE : 200 ~800
5MAX. jiil
TBC549 TBC550
Unit in mm
MAXIMUM RATINGS (Ta=25 C)
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
TBC549 V(BR)CBO
TBC550
Collector-Emitter Breakdown Voltage
TBC549 v (BR)CEO
TBC550
Emitter-Base Breakdown Vol...
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| Datasheet |
 TBC549 Datasheet 52.35KB |
