TBC549 Overview
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR LOW NOISE STAGE OF AUDIO AMPLIFIERS.
TBC549 Key Features
- 65-150
- 2mA Rg=2kn, f=lkHz
- MAX. 15
- UNIT nA
- 3.5 4.5
- 0.135 tiM
| Part number | TBC549 |
|---|---|
| Datasheet | TBC549-Toshiba.pdf |
| File Size | 52.35 KB |
| Manufacturer | Toshiba |
| Description | Silicon NPN Transistor |
|
|
|
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR LOW NOISE STAGE OF AUDIO AMPLIFIERS.
| Part Number | Description |
|---|---|
| TBC546 | Silicon NPN Transistor |
| TBC547 | Silicon NPN Transistor |
| TBC548 | Silicon NPN Transistor |
| TBC550 | Silicon NPN Transistor |
| TBC556 | Silicon PNP Transistor |
| TBC557 | Silicon PNP Transistor |
| TBC558 | Silicon PNP Transistor |
| TBC559 | Silicon PNP Transistor |
| TBC560 | Silicon PNP Transistor |
| TBC327 | Silicon PNP Transistor |