TBC549 Description
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR LOW NOISE STAGE OF AUDIO AMPLIFIERS.
TBC549 Key Features
- 65-150
- 2mA Rg=2kn, f=lkHz
- MAX. 15
- UNIT nA
- 3.5 4.5
- 0.135 tiM
- Part: TBC549
- Manufacturer: Toshiba
- Size: 52.35 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| TBC546 | Silicon NPN Transistor |
| TBC547 | Silicon NPN Transistor |
| TBC548 | Silicon NPN Transistor |
| TBC550 | Silicon NPN Transistor |
| TBC556 | Silicon PNP Transistor |