| Description | SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC556 TBC557 TBC558 PRIMARILY INTENDED FOR USE DRIVER STAGE OF AUDIO AMPLIFIERS. Unit in mm FEATURES . High VcEO . Low Noise -65V (TBC556) -45V (TBC557) -30V (TBC558) 0.45 11 1.27 1.27 H^fj/\ X 3 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Breakdown Voltage TBC556 TBC557 TBC558 Collector-Emitter Breakdown Voltage TBC556 TBC557 TBC... |
| Features |
. High VcEO
. Low Noise
-65V (TBC556) -45V (TBC557) -30V (TBC558)
0.45
11
1.27
1.27
H^fj/\ X 3
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Breakdown Voltage
TBC556 TBC557 TBC558
Collector-Emitter Breakdown Voltage
TBC556 TBC557 TBC558
Emitter-Base Breakdown Voltage
SYMBOL v (BR)CBO v (BR)CE0 V (BR)EB0
RATING -80
-50
-30 -65...
|
| Datasheet |
 TBC558 Datasheet 50.94KB |
