Datasheet4U Logo Datasheet4U.com

TBC559 - Silicon PNP Transistor

Features

  • . High V CE0 : -45V (TBC560) -25V (TBC559) . High hFE = 125-475 Unit in mm 5. 1 MAX. , 1 : < S t- 0.45 I'] O. E35 MAX. 1 r J C.45 1! m r s CO 00 A c! r- r-t 1.27 m / 1.27 X 23J.

📥 Download Datasheet

Datasheet preview – TBC559

📁 Similar Datasheet

  • TBC50C04 - Hall Current Sensor (Token Electronics)
  • TBC50DS - Hall Current Sensor (Token Electronics)
  • TBC-DS - Hall Current Sensor (Token Electronics)
  • TBC06DS - Hall Current Sensor (Token Electronics)
  • TBC0747 - DUAL OPERATIONAL AMPLIFIER (Siemens)
  • TBC0748 - Operational Amplifier (Siemens)
  • TBC1458 - DUAL OPERATIONAL AMPLIFIER (Siemens)
  • TBC15DS - Hall Current Sensor (Token Electronics)
  • TBC2332 - DUAL OPERATIONAL AMPLIFIER (Siemens)
  • TBC25C04 - Hall Current Sensor (Token Electronics)
Other Datasheets by Toshiba
  • TBC550 - Silicon NPN Transistor
  • TBC556 - Silicon PNP Transistor
  • TBC557 - Silicon PNP Transistor
  • TBC558 - Silicon PNP Transistor
  • TBC546 - Silicon NPN Transistor
  • TBC547 - Silicon NPN Transistor
  • TBC548 - Silicon NPN Transistor
  • TBC549 - Silicon NPN Transistor

Full PDF Text Transcription

Click to expand full text
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC559 TBC560 PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS. THE TBC559 AND TBC560 IS LOW NOISE TYPE FOR INPUT STAGE OF AUDIO AMPLIFIERS. FEATURES . High V CE0 : -45V (TBC560) -25V (TBC559) . High hFE = 125-475 Unit in mm 5. 1 MAX. , 1 : < S t- 0.45 I'] O.E35 MAX. 1 r J C.45 1! m r s CO 00 A c! r- r-t 1.27 m / 1.
Published: |