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TBC559 Datasheet

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Toshiba · TBC559 File Size : 53.07KB · 2 hits

Features and Benefits

. High V CE0 : -45V (TBC560) -25V (TBC559) . High hFE = 125-475 Unit in mm 5. 1 MAX. , 1 : < S t- 0.45 I'] O.E35 MAX. 1 r J C.45 1! m r s CO 00 A c! r- r-t 1.27 m / 1.27 X 23J MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC559 v (BR)CBO .

TBC559 TBC559 TBC559
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Silicon
PNP
Transistor
TBC550
TBC556
TBC557
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