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TC58NVG0S3HBAI6 Datasheet 1G-BIT (128M x 8 BIT) CMOS NAND E2PROM

Manufacturer: Toshiba

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General Description

The TC58NVG0S3HBAI6 is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes × 64 pages × 1024 blocks.

The device has a 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments.

The Erase operation is implemented in a single block unit (128 Kbytes + 8 Kbytes: 2176 bytes × 64 pages).

Overview

TC58NVG0S3HBAI6 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1G BIT (128M × 8 BIT) CMOS NAND.

Key Features

  • Organization Memory cell array Register Page size Block size x8 2176 × 64K × 8 2176 × 8 2176 bytes (128K + 8K) bytes.
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy.
  • Mode control Serial input/output Command control.
  • Number of valid blocks Min 1004 blocks Max 1024 blocks.
  • Power supply VCC = 2.7V to 3.6V.
  • Access time Cell array to register Read Cycle Time.
  • Program/Erase time Auto Page Program Auto B.

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