TC58NVG0S3HBAI6 Datasheet (1G-BIT (128M x 8 BIT) CMOS NAND E2PROM)

Part: TC58NVG0S3HBAI6
Manufacturer: Toshiba (official site)
Size: 2.45 MB

TC58NVG0S3HBAI6 Key Features

Organization
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
Mode control Serial input/output mand control
Number of valid blocks Min 1004 blocks Max 1024 blocks
Power supply VCC = 2.7V to 3.6V
Access time Cell array to register Read Cycle Time
Program/Erase time Auto Page Program Auto Block Erase
Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby
Package P-VFBGA67-0608-0.80-001 (Weight: 0.095 g typ.)
8 bit ECC for each 512Byte is required

Related Toshiba Datasheets

Part Number	Description
TC58NVG0S3HBAI4	1G BIT (128M x 8-BIT) CMOS NAND E2PROM
TC58NVG0S3HTA00	1 GBIT (128M x 8 BIT) CMOS NAND E2PROM
TC58NVG0S3HTAI0	1 GBIT (128M x 8 BIT) CMOS NAND E2PROM
TC58NVG0S3AFT00	1 GBit CMOS NAND EPROM
TC58NVG0S3AFT05	1 GBit CMOS NAND EPROM

TC58NVG0S3HBAI6 Description

The device has a 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 8 Kbytes: The TC58NVG0S3HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.