Datasheet4U Logo Datasheet4U.com

TC58NVG4D2FTA00 - 16 GBIT (4G x 8 BIT) CMOS NAND E2PROM

Description

The TC58NVG4D2 is a single 3.3 V 16 Gbit (18,367,119,360 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 448) bytes × 128 pages × 2076 blocks.

Features

  • Organization Memory cell array Register Page size Block size TC58NVG4D2F 8640 × 259.5K × 8 8640 × 8 8640 bytes (1M + 56 K) bytes.
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Mullti Page Read.
  • Mode control Serial input/output Command control.
  • Number of valid blocks Min 1968 blocks Max 2076 blocks.
  • Power supply VCC = 2.7 V to 3.6 V.
  • Access time C.

📥 Download Datasheet

📁 Similar Datasheet

  • TC58NS256DC - TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT CMOS NAND E2PROM (Toshiba Semiconductor)
  • TC581282AXB - 128-MBIT (16M X 8 BITS) CMOS NAND E2PROM (Toshiba Semiconductor)
  • TC58128FT - 128M-Bit CMOS NAND EPROM (Toshiba Semiconductor)
  • TC58128FTI - 128M-Bit CMOS NAND EPROM (Toshiba Semiconductor)
  • TC5816BDC - 16 MBIT (2M x 8 BITS) CMOS NAND FLASH E2PROM (Toshiba Semiconductor)
  • TC5816BFT - 16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROM (Toshiba Semiconductor)
  • TC58256AFT - 256-MBIT (32M X 8 BITS) CMOS NAND E2PROM (Toshiba Semiconductor)
  • TC58256DC - CMOS NAND EPROM (Toshiba Semiconductor)
  • TC5832DC - 32 MBIT (4M x 8BIT) CMOS NAND E2PROM (Toshiba Semiconductor)
  • TC5832FT - 32 MBIT (4M X 8 BITS) CMOS NAND E2PROM (Toshiba Semiconductor)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
TOSHIBA CONFIDENTIAL TC58NVG4D2FTA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (4G × 8 BIT) CMOS NAND E2PROM (Multi-Level-Cell) DESCRIPTION The TC58NVG4D2 is a single 3.3 V 16 Gbit (18,367,119,360 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 448) bytes × 128 pages × 2076 blocks. The device has two 8640-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 8640-byte increments. The Erase operation is implemented in a single block unit (1 Mbytes + 56 Kbytes: 8640 bytes × 128 pages). The TC58NVG4D2 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.
Published: |