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SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
TEC8012
DRIVER STAGE AMPLIFIER APPLICA TIONS.
Unit in mm
SWITCHING APPLICATIONS.
FEATURES . Excellent hFE Linearity
: hFE(2)=23(Min.) at VCE =-lV, I C =- 400mA . 1 Watt Amplifier Application . Complementary to TEC8013
51 MAX.
:
-
'
it CL45
j
1
Q55MAX.
,|
Q45
'
< S
00
M
1
30
S
C5
r-i
MAXIMUM RATINGS (Ta=25°C)
1
.
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO ic IB PC
Tj
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
RATING -40 -30 -5
-500 -100
625 150
-55-150
UNIT V V V
mA mA mW °C °C
1.27
1.27
,
x
,
in
c5 ( n-^>
Imp ipip l
jg
1 2 3/
,-,
^ ^y
1.
TEC8012 Datasheet
