Datasheet4U Logo Datasheet4U.com

TH58BVG3S0HBAI6 Datasheet 8G-BIT (1G x 8 BIT) CMOS NAND E2PROM

Manufacturer: Toshiba

Overview: TH58BVG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G × 8 BIT) CMOS NAND.

📥 Download Datasheet

General Description

The TH58BVG3S0HBAI6 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.

The device has a 4224-byte static register which allows program and read data to be transferred between the register and the memory cell array in 4224-bytes increments.

The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: 4224 bytes × 64 pages).

Key Features

  • Organization x8 Memory cell array 4224 × 128K × 8 × 2 Register 4224 × 8 Page size 4224 bytes Block size (256K + 8K) bytes.
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read.
  • Mode control Serial input/output Command control.
  • Number of valid blocks Min 4016 blocks Max 4096 blocks.
  • Power supply VCC = 2.7V to 3.6V.
  • Access time Cell.

More Datasheets from Toshiba

Part Number Description
TH58BVG3S0HBAI4 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM
TH58BVG3S0HTA00 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM
TH58BVG3S0HTAI0 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM
TH58BVG2S3HBAI4 4-GBIT (512M x 8-BIT) CMOS NAND E2PROM
TH58BYG3S0HBAI4 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM
TH58NVG2S3BTG00 4-Gbit CMOS NAND EPROM
TH58NVG3D4BTG00 8 GBIT (1024M x 8 BIT) CMOS NAND E2PROM
TH58NVG3S0HBAI4 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM
TH58NVG3S0HBAI6 8G-BIT (1G x 8 BIT) CMOS NAND E2PROM
TH58NVG3S0HTA00 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM