ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 45.0dBm at 9.5GHz to 10.5GHz ŋHIGH GAIN
G1dB= 7.0dB at 10.5GHz to 10.5GHz ŋLOW INTERMODULATION DISTORTION
IM3= -25dBc.
This website uses cookies or similar technologies, to enhance your browsing experience and provide personalized recommendations. By continuing to use our website, you agree to our Privacy Policy
Download