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FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.5dBm at 14.0GHz to 14.5GHz ･HIGH GAIN
G1dB= 6.0dB at 14.0GHz to 14.5GHz ･LOW INTERMODULATION DISTORTION
IM3(Min.)= -25dBc at Pout= 36.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM1414-18L
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 9V IDSset= 4.4A f = 14.0 to 14.5GHz
UNIT dBm dB
A dB
Power Added Efficiency
add
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 36.
TIM1414-18L Datasheet
