TIM1414-18L-252 Datasheet | Toshiba

MICROWAVE POWER Ga As FET Features ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1d B= 42.0d Bm at 13.75GHz to 14.5GHz ŋHIGH GAIN G1d B= 6.0d B at 13.75GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -25d Bc(Min.) at Pout= 36d Bm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1d B Gain pression Point Power Gain at 1d B Gain pression Point Drain Current SYMBOL CONDITIONS P1d B G1d B IDS1 VDS= 9V IDSset= 4.4A f= 13.75 to 14.5GHz UNIT d Bm d B Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone Test d Bc Po= 36d Bm, f= 5MHz (Single Carrier Level) (VDS  IDS  Pin - P1d B)  Rth(c-c) °C Remended Gate Resistance(Rg): 100  MIN. 41.5 5.0   -25   TYP. MAX. 42.0...