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TIM1414-18L-252 - MICROWAVE POWER GaAs FET

Datasheet Summary

Features

  • ŋBROAD BAND.

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Datasheet preview – TIM1414-18L-252

Datasheet Details

Part number TIM1414-18L-252
Manufacturer Toshiba
File Size 346.63 KB
Description MICROWAVE POWER GaAs FET
Datasheet download datasheet TIM1414-18L-252 Datasheet
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Full PDF Text Transcription

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MICROWAVE POWER GaAs FET TIM1414-18L-252 FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.0dBm at 13.75GHz to 14.5GHz ŋHIGH GAIN G1dB= 6.0dB at 13.75GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -25dBc(Min.) at Pout= 36dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current SYMBOL CONDITIONS P1dB G1dB IDS1 VDS= 9V IDSset= 4.4A f= 13.75 to 14.
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