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TIM1414-18L - Microwave Power GaAs FET

Datasheet Summary

Features

  • ･BROAD BAND.

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Datasheet Details

Part number TIM1414-18L
Manufacturer Toshiba
File Size 339.56 KB
Description Microwave Power GaAs FET
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Full PDF Text Transcription

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FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.5dBm at 14.0GHz to 14.5GHz ･HIGH GAIN G1dB= 6.0dB at 14.0GHz to 14.5GHz ･LOW INTERMODULATION DISTORTION IM3(Min.)= -25dBc at Pout= 36.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1414-18L RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 9V IDSset= 4.4A f = 14.0 to 14.5GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 36.
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