Datasheet Summary
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TOSHIBA
MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band)
Features
- High power
- P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz
- High gain
- G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz
- Broad Band Internally Matched
- Hermetically sealed package RF Performance Specifications (Ta = 25° C)
Characteristics Output Power at 1dB pression Point Power Gain at 1dB pression Point Drain Current Power Added Efficiency Channel-Temperature Rise Symbol P1dB G1dB IDS ηadd ∆Tch VDS X IDS X Rth(c-c) VDS = 9V f = 14.0 ~ 14.5 GHz Condition Unit dBm dB A % °C Min. 36.0 6.0
- -
- Typ. 36.5 6.5 1.7 23
- Max
- - 2.2
- 70
DataShee
Electrical Characteristics (Ta =...