ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 44.5dBm at 7.7GHz to 8.5GHz ŋHIGH GAIN
G1dB= 8.5dB at 7.7GHz to 8.5GHz ŋLOW INTERMODULATION DISTORTION
IM3= -47dBc at.
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