･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 36.5dBm at 8.5GHz to 9.6GHz ･HIGH GAIN
G1dB= 7.5dB at 8.5GHz to 9.6GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER .
This website uses cookies or similar technologies, to enhance your browsing experience and provide personalized recommendations. By continuing to use our website, you agree to our Privacy Policy
Download