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TPC8223-H - Silicon N-Channel MOSFET

Features

  • (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 3.6 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 17 mΩ (typ. ) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TPC8223-H SOP-8 1, 3: Source 2, 4: Gate 5, 6, 7, 8: Drain Start of commercial production 2010-10 1 2014-02-27 Rev.4.0 TPC8223-H 4. Absolute Maximum Ratings (Note) (Ta =.

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MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC8223-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 3.6 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 17 mΩ (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TPC8223-H SOP-8 1, 3: Source 2, 4: Gate 5, 6, 7, 8: Drain Start of commercial production 2010-10 1 2014-02-27 Rev.4.0 TPC8223-H 4.
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