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TPCA8131 - Silicon P-Channel MOSFET

Key Features

  • (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 12.4 mΩ (typ. ) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Internal Circuit TPCA8131 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS -30 V Gate-source voltage.

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Datasheet Details

Part number TPCA8131
Manufacturer Toshiba
File Size 269.51 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet TPCA8131 Datasheet

Full PDF Text Transcription for TPCA8131 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TPCA8131. For precise diagrams, and layout, please refer to the original PDF.

MOSFETs Silicon P-Channel MOS (U-MOS) TPCA8131 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features (1) Small, thin package (2) Low ...

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Power Management Switches 2. Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 12.4 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Internal Circuit TPCA8131 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4.

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