TPCP8606 - Silicon PNP Transistor

Product Overview

Toshiba

Part number	TPCP8606
Manufacturer	Toshiba
File Size	303.12 KB
Description	Silicon PNP Transistor
Datasheet	TPCP8606 Datasheet
Additional preview pages of the TPCP8606 datasheet.

(1) High DC current gain: hFE = 100 to 200 (VCE = -2 V, IC = -0.4 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.22 V (max) (IC = -1.2 A, IB = -0.12 A) (3) High-speed switching: tf = 35 ns (typ. ) (IC = -1.2 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4. Base 5. Collector 6. Collector 7. Collector 8. Collector ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-01 2023-01-16 Rev.2.0 TPCP8606 4. Ab.

📁 Similar Datasheet

Other Datasheets by Toshiba

Published: Jan 30, 2024 |