* (1) High DC current gain: hFE = 100 to 200 (VCE = -2 V, IC = -0.4 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.22 V (max) (IC = -1.2 A, IB = -0.12 A) (3) High-speed switching: tf = 35 ns (typ.) (IC = -1.2 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter
TPCP8606 Datasheet (303.12 KB)
TPCP8606
303.12 KB
Silicon pnp transistor.
Bipolar Transistors Silicon PNP Epitaxial Type TPCP8606 TPCP8606 1. Applications High-Speed Switching DC-DC Converters 2. Featur.
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