TPH1R104PB - Silicon N-channel MOSFET

Product Overview

Toshiba

Part number	TPH1R104PB
Manufacturer	Toshiba
File Size	565.02 KB
Description	Silicon N-channel MOSFET
Datasheet	TPH1R104PB Datasheet
Additional preview pages of the TPH1R104PB datasheet.

(1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 0.95 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TPH1R104PB SOP Advance(WF) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2015-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2018-03 2020-06-24 Rev.7.0 TPH1R104PB 4. Absolute M.

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Published: May 9, 2019 |