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TPH1R712MD - Silicon P-Channel MOSFET

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 1.35 mΩ (typ. ) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit TPH1R712MD 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±12 Drain current.

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Datasheet Details

Part number TPH1R712MD
Manufacturer Toshiba
File Size 801.05 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet TPH1R712MD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon P-Channel MOS (U-MOS) TPH1R712MD 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.35 mΩ (typ.) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit TPH1R712MD 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4.