TPH1R712MD - Silicon P-Channel MOSFET

Toshiba

Datasheet Details

(1) Low drain-source on-resistance: RDS(ON) = 1.35 mΩ (typ. ) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit TPH1R712MD 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±12 Drain current.

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Published: Nov 19, 2019 |