Datasheet4U Logo Datasheet4U.com

TPH2R608NH - N-Channel MOSFET

Key Features

  • (1) High-speed switching (2) Small gate charge: QSW = 28 nC (typ. ) (3) Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 75 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPH2R608NH 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltag.

📥 Download Datasheet

Full PDF Text Transcription for TPH2R608NH (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TPH2R608NH. For precise diagrams, and layout, please refer to the original PDF.

MOSFETs Silicon N-channel MOS (U-MOS-H) TPH2R608NH 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2. Features (1) High-speed switching...

View more extracted text
rs • Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 28 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 75 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPH2R608NH 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4.

More Datasheets from Toshiba

Part Number Description
TPH2R003PL Silicon N-channel MOSFET
TPH2R104PL Silicon N-channel MOSFET
TPH2R306NH MOSFETs
TPH2R506PL Silicon N-channel MOSFET
TPH2R805PL Silicon N-channel MOSFET
TPH2010FNH Silicon N-channel MOSFET
TPH2900ENH Silicon N-channel MOSFET
TPH11003NL MOSFETs
TPH11006NL Silicon N-channel MOSFET
TPH1110ENH Silicon N-channel MOSFET