TPH9R00CQH - Silicon N-channel MOSFET
TPH9R00CQH Features
* (1) High-speed switching (2) Small gate charge: QSW = 11.7 nC (typ.) (3) Small output charge: Qoss = 87 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 7.3 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) (6) Enhancement mode: Vth = 3.3 to 4.3 V (VDS = 10 V, I
