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TPN11006NL Datasheet, Toshiba

TPN11006NL mosfet equivalent, mosfet.

TPN11006NL Avg. rating / M : 1.0 rating-11

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TPN11006NL Datasheet

Features and benefits

(1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 6.4 nC (typ.) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ.) (VGS = 10 V) Low leakage current: .

Application


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* Switching Voltage Regulators DC-DC Converters Motor Drivers 2. Features (1) (2) (3) (4) (5) High-spee.

Image gallery

TPN11006NL Page 1 TPN11006NL Page 2 TPN11006NL Page 3

TAGS

TPN11006NL
MOSFET
Toshiba

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