TPN11006NL - MOSFET

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Toshiba

Part number	TPN11006NL
Manufacturer	Toshiba
File Size	234.05 KB
Description	MOSFET
Datasheet	TPN11006NL Datasheet
Additional preview pages of the TPN11006NL datasheet.

(1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 6.4 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain curre.

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Published: Aug 29, 2014 |