TPN1200APL Datasheet Silicon N-channel MOSFET

Manufacturer: Toshiba

Datasheet Details

MOSFETs Silicon N-channel MOS (U-MOS-H) TPN1200APL 1.

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2.

(1) High-speed switching (2) Small gate charge: QSW = 7.5 nC (typ. ) (3) Small output charge: Qoss = 24 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 9.8 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TPN1200APL TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2017-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial p.