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TPN4R712MD - Silicon P-Channel MOSFET

Toshiba

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Datasheet Details

Part number	TPN4R712MD
Manufacturer	Toshiba ↗
File Size	746.06 KB
Description	Silicon P-Channel MOSFET
Datasheet	TPN4R712MD-Toshiba.pdf

TPN4R712MD Product details

Features

(1) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ. ) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit TPN4R712MD TSON Advance 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain ©2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-12 2019-10-30 Rev.5.0 TPN4R712MD 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise.

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Published: Nov 19, 2019 |