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TPN4R712MD - Silicon P-Channel MOSFET

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ. ) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit TPN4R712MD TSON Advance 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain ©2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-12 2019-10-30 Rev.5.0 TPN4R712MD 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise.

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Datasheet Details

Part number TPN4R712MD
Manufacturer Toshiba
File Size 746.06 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet TPN4R712MD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon P-Channel MOS (U-MOS) TPN4R712MD 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit TPN4R712MD TSON Advance 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain ©2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-12 2019-10-30 Rev.5.0 TPN4R712MD 4.