TPN4R712MD mosfet equivalent, silicon p-channel mosfet.
(1) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to .
* Lithium-Ion Secondary Batteries
* Power Management Switches
2. Features
(1) Low drain-source on-resistance: RD.
Image gallery
Download