TPN7R506NH - MOSFET

Product Overview

Toshiba

Part number	TPN7R506NH
Manufacturer	Toshiba
File Size	236.08 KB
Description	MOSFET
Datasheet	TPN7R506NH Datasheet
Additional preview pages of the TPN7R506NH datasheet.

(1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 9.2 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 6.0 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain curren.

📁 Similar Datasheet

Other Datasheets by Toshiba

Published: Aug 29, 2014 |