(1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: IFSM = 92 A (max) (3) Low junction capacitance: Cj = 44 pF (typ.) (4) Low reverse cu.

* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Supplies
* DC-DC Converters 2. Featu.

SiC Schottky Barrier Diode

TRS1225

TRS1245

TRS12E65H

TRS12V65H

TRS1-0MCR00V

TRS1-0MCR01V

TRS1-0MLR00V

TRS1-0MSR01EV

TRS1-100MCR00V

TRS1-100MCR01V

TRS1-100MLR00V

TRS1-100MSR01EV

TRS1-10MCR00V

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