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TRS6A65F Datasheet, Diode, Toshiba

TRS6A65F Datasheet, Diode, Toshiba

TRS6A65F

datasheet Download (Size : 269.64KB)

TRS6A65F Datasheet
TRS6A65F

datasheet Download (Size : 269.64KB)

TRS6A65F Datasheet

TRS6A65F Features and benefits

TRS6A65F Features and benefits

(1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: IFSM = 52 A (3) Low junction capacitance: Cj = 22 pF (typ.) (4) Low reverse current:.

TRS6A65F Application

TRS6A65F Application


* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Supplies
* DC-DC Converters 2. Featu.

TRS6A65F Description

TRS6A65F Description

SiC Schottky Barrier Diode

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TRS6A65F Page 1 TRS6A65F Page 2 TRS6A65F Page 3

TAGS

TRS6A65F
SiC
Schottky
Barrier
Diode
Toshiba

Manufacturer


Toshiba (https://www.toshiba.com/)

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