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TRS6E65F Datasheet, Diode, Toshiba

TRS6E65F Datasheet, Diode, Toshiba

TRS6E65F

datasheet Download (Size : 285.77KB)

TRS6E65F Datasheet
TRS6E65F

datasheet Download (Size : 285.77KB)

TRS6E65F Datasheet

TRS6E65F Features and benefits

TRS6E65F Features and benefits

(1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 55A (Max) (3) The junction capacitance is small : Cj = 22 pF (Typ.) (4) The reverse current .

TRS6E65F Application

TRS6E65F Application


* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Supplies
* DC-DC Converters 2. Featu.

TRS6E65F Description

TRS6E65F Description

SiC Schottky Barrier Diode

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TRS6E65F Page 1 TRS6E65F Page 2 TRS6E65F Page 3

TAGS

TRS6E65F
SiC
Schottky
Barrier
Diode
Toshiba

Manufacturer


Toshiba (https://www.toshiba.com/)

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