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TRS6E65H Datasheet, Diode, Toshiba

TRS6E65H Datasheet, Diode, Toshiba

TRS6E65H

datasheet Download (Size : 421.21KB)

TRS6E65H Datasheet
TRS6E65H

datasheet Download (Size : 421.21KB)

TRS6E65H Datasheet

TRS6E65H Features and benefits

TRS6E65H Features and benefits

(1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 17 nC (typ.) (4) Low reverse current: IR = 1.1 µA (typ.

TRS6E65H Application

TRS6E65H Application


* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Supplies
* DC-DC Converters 2. Featu.

TRS6E65H Description

TRS6E65H Description

SiC Schottky Barrier Diode

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TRS6E65H Page 1 TRS6E65H Page 2 TRS6E65H Page 3

TAGS

TRS6E65H
SiC
Schottky
Barrier
Diode
Toshiba

Manufacturer


Toshiba (https://www.toshiba.com/)

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