TTA009 Silicon PNP Epitaxial Type Bipolar Transistors
(1) Low collector saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA)
(2) High-speed switching
: tstg = 300 ns (typ.) (IC = -1 A)
3. Packaging and .
• Power Amplifiers
• Power Switching
2. Features
(1) Low collector saturation voltage : VCE(sat) = -0.5 V (max.
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