TTA010 Silicon PNP Triple-Diffused Type Bipolar Transistors
(1) High collector voltage: VCEO = -500 V (min) (2) High DC current gain: hFE = 100 to 300 (VCE = -10 V, IC = -20 mA) (3) Low collector-emitter saturation voltage: VCE(sa.
• High-Voltage Switching
2. Features
(1) High collector voltage: VCEO = -500 V (min) (2) High DC current gain: hFE =.
Image gallery
Download