Datasheet4U.com

TTA010 - Silicon PNP Triple-Diffused Type Bipolar Transistors

Toshiba

📥 Download Datasheet

TTA010 Datasheet Preview — Preview of TTA010 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number: TTA010
Manufacturer: Toshiba ↗
File Size: 286.00 KB
Datasheet: TTA010-Toshiba.pdf
Description: Silicon PNP Triple-Diffused Type Bipolar Transistors

TTA010 Product details

Features

(1) High collector voltage: VCEO = -500 V (min) (2) High DC current gain: hFE = 100 to 300 (VCE = -10 V, IC = -20 mA) (3) Low collector-emitter saturation voltage: VCE(sat) = -0.3 V (max) (IC = -20 mA, IB = -2 mA) 3. Packaging and Internal Circuit 1. Base 2. Collector (Heatsink) 3. Emitter PW-Mini 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics Symbol Rating Unit Collector-base voltage VCBO -500 V Collector-emitter voltage VCEO -500 V.

📁 Related Datasheet

TTA0001 - PNP Transistor (INCHANGE)
TTA0002 - PNP Transistor (INCHANGE)
TTA007 - Silicon PNP Transistor (Toshiba Semiconductor)
TTA1452 - PNP Transistor (INCHANGE)
TTA1452B - PNP Transistor (INCHANGE)
TTA145N08A - 85V N-Channel Trench MOSFET (Unigroup)
TTA1586FU - Silicon PNP Transistor (Toshiba Semiconductor)
TTA1943 - Silicon PNP Transistor (nELL)

📌 All Tags

Silicon PNP Triple-Diffused Type Bipolar Transistors Toshiba

Toshiba TTA010-like datasheet

TTA011 - Silicon PNP Epitaxial Type Bipolar Transistors
TTA012 - Silicon PNP Epitaxial Type Bipolar Transistors
TTA013 - Silicon PNP Epitaxial Type Bipolar Transistors
TTA014 - Silicon PNP Epitaxial Type Bipolar Transistors
TTA003 - Silicon PNP Epitaxial Type Bipolar Transistors
TTA004 - Silicon PNP Epitaxial Type Transistor

TTA010 Stock/Price